A New Production Solution for High Selective and Low-Damage Etching of GaAs-Based Devices
Conventional reactive ion etching (RIE) has generally been used for selective etching of GaAs over AlGaAs. However, there is a […]
Whitepaper
The Effects of Increasing the Aspect Ratio of GaAs Backside Vias
To support the current trend in industry of working towards higher via densities which could shrink via dimensions, we report
Assessing Deep Reactive Ion Etch (DRIE) at CNF
Cornell University’s Nanoscale Science and Technology Facility (CNF) recently took delivery of a VERSALINE® deep silicon dry etching system. The comprehensive
Optimization of Low Stress PECVD Silicon Nitride for GaAs Manufacturing
Unaxis solutions for plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (SiNx) are used extensively in the production of GaAs devices.
Silicon Nitride for MEMS Applications: LPCVD and PECVD Process Comparison
The MEMS industry grew by more than 10% in 2012, a year when the semiconductor industry experienced a 2% decline.
Batch Deposition Module Cuts Downtime and Material Waste
Maximizing yield, increasing throughput and reducing scrap is becoming increasingly critical for SaAs device manufacturers as customers demand cheaper products.
